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| Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 APPLICATIONSL Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature----------- 55~175ae Tj PD Operating TO-220 1D G 2D D 3D S Junction Temperature ------ 150ae --- Allowable Power Dissipation c=25ae -----T (c) 131W Drain-Source Voltage ----------60V Gate-Source Voltage ------------ 20V VDSS VGSS ID Drain Current c=25ae ------- --45A T (c) - -- - ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss tON td(on) tr td(off) tf tOFF Qg Qg(10) Qgd Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Source Leakage Current Gate Threshold Voltage *Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn - On Delay Time Rise Time Turn - Off Delay Time 60 1 2.0 2050 600 200 120 12 74 37 V ID=250|I ,VGS=0V A |I VDS = 60V GS=0 A V nA V ? pF pF pF nS nS nS nS nS VDD =30V, ID =45A RL=0.667|VGS=10V , RG= 3.6 | VDS =25V, VGS=0,f=1MHz VGS=A , VDS =0V 20V VDS = VGS , ID =250|I A VGS=10V, ID =45A A 100 4.0 0.02 8 Fall Time Turn Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge 16 80 125 67 3.7 150 80 4.5 nS nC nC nC VGS =20V VGS =10V VGS =2V Ig VDS =48V =45A ID RL=1.07| EF (c)1.5mA R = VSD Diode Forward Voltage Rth Thermal Resistance j-c(c) Junction-to-Case *Pulse Test Pulse WidthU 300|I Duty CycleU s 2% 1.5 1.14 V ae /W ISD =45A Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP45N06 |
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